Title :
High performance ultra-low energy RRAM with good retention and endurance
Author :
Cheng, C.H. ; Tsai, C.Y. ; Chin, Albert ; Yeh, F.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 104 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.
Keywords :
flash memories; low-power electronics; random-access storage; current 0.1 muA; energy 6 fJ; flash memory; non-volatile memory; power 0.3 muW; power 0.6 nW; switching energy; temperature 125 C; time 20 ns; ultra-low energy RRAM; voltage 3 V;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703392
