Title :
P-i-n junction in silicon nanowires
Author :
Foo, K.L. ; Rusli ; Yu, M.B. ; Singh, Navab ; Buddharaju, K.D. ; Sun, Yeali S. ; Chan, Louiza ; Ng, C.M.
Author_Institution :
Sch. of Eng., Nanyang Technol. Univ., Singapore
Abstract :
P-i-n junctions were fabricated along silicon nanowires of about 8 nm in cross-sectional dimension via the conventional top-down approach. Rectifying electrical characteristics have been observed and the ideality factor is estimated to be 3.8, attributed to trapped charges in the encapsulating silicon dioxide layer. Dopants diffusion along the nanowires reduces the effective length of the intrinsic region. The reverse bias breakdown exhibiting a negative temperature coefficient could be attributed to tunneling effect. The p-i-n junctions respond well to illumination despite their small capture area and preliminary results on photoresponse will be presented.
Keywords :
elemental semiconductors; nanotechnology; nanowires; p-i-n photodiodes; p-n junctions; silicon; Si; dopants diffusion; ideality factor; negative temperature coefficient; p-i-n junction; p-i-n photodiodes; rectifying electrical characteristics; reverse bias breakdown; silicon dioxide layer; silicon nanowires; trapped charges; tunneling effect; Nanoelectronics; Nanowires; PIN photodiodes; Silicon;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585682
