DocumentCode :
2370075
Title :
A 1.8V 1Gb NAND flash memory with 0.12/spl mu/m STI process technology
Author :
June Lee ; Heung-Soo Im ; Dae-Seok Byeon ; Kyeong-Han Lee ; Dong-Hyuk Chae ; Kyong-Hwa Lee ; Young-Ho Lim ; Jung-Dal Choi ; Young-Il Seo ; Jong-Sik Lee ; Kang-Deog Suh
Author_Institution :
Samsung Electronics
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
80
Lastpage :
410
Keywords :
Batteries; Charge pumps; Decoding; Flash memory; Low voltage; Power supplies; Radio control; Registers; Size control; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992121
Filename :
992121
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370075
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