• DocumentCode
    2370075
  • Title

    A 1.8V 1Gb NAND flash memory with 0.12/spl mu/m STI process technology

  • Author

    June Lee ; Heung-Soo Im ; Dae-Seok Byeon ; Kyeong-Han Lee ; Dong-Hyuk Chae ; Kyong-Hwa Lee ; Young-Ho Lim ; Jung-Dal Choi ; Young-Il Seo ; Jong-Sik Lee ; Kang-Deog Suh

  • Author_Institution
    Samsung Electronics
  • Volume
    2
  • fYear
    2002
  • fDate
    7-7 Feb. 2002
  • Firstpage
    80
  • Lastpage
    410
  • Keywords
    Batteries; Charge pumps; Decoding; Flash memory; Low voltage; Power supplies; Radio control; Registers; Size control; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7335-9
  • Type

    conf

  • DOI
    10.1109/ISSCC.2002.992121
  • Filename
    992121