DocumentCode
2370075
Title
A 1.8V 1Gb NAND flash memory with 0.12/spl mu/m STI process technology
Author
June Lee ; Heung-Soo Im ; Dae-Seok Byeon ; Kyeong-Han Lee ; Dong-Hyuk Chae ; Kyong-Hwa Lee ; Young-Ho Lim ; Jung-Dal Choi ; Young-Il Seo ; Jong-Sik Lee ; Kang-Deog Suh
Author_Institution
Samsung Electronics
Volume
2
fYear
2002
fDate
7-7 Feb. 2002
Firstpage
80
Lastpage
410
Keywords
Batteries; Charge pumps; Decoding; Flash memory; Low voltage; Power supplies; Radio control; Registers; Size control; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7335-9
Type
conf
DOI
10.1109/ISSCC.2002.992121
Filename
992121
Link To Document