• DocumentCode
    2370115
  • Title

    Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

  • Author

    Lee, H.Y. ; Chen, Y.S. ; Chen, P.S. ; Gu, P.Y. ; Hsu, Y.Y. ; Wang, S.M. ; Liu, W.H. ; Tsai, C.H. ; Sheu, S.S. ; Chiang, P.-C. ; Lin, W.P. ; Lin, C.H. ; Chen, W.S. ; Chen, F.T. ; Lien, C.H. ; Tsai, M-J

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    The memory performances of the HfOX based bipolar resistive memory, including switching speed and memory reliability, are greatly improved in this work. Record high switching speed down to 300 ps is achieved. The cycling test shed a clear light on the wearing behavior of resistance states, and the correlation between over-RESET phenomenon and the worn low resistance state in the devices is discussed. The modified bottom electrode is proposed for the memory device to maintain the memory window and to endure resistive switching up to 1010 cycles.
  • Keywords
    high-speed integrated circuits; integrated circuit reliability; integrated memory circuits; bipolar resistive memory; memory device; memory reliability; over-RESET problem; switching speed; time 300 ps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703395
  • Filename
    5703395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370115