DocumentCode :
2370123
Title :
Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs
Author :
Arehart, A.R. ; Sasikumar, A. ; Via, G.D. ; Winningham, B. ; Poling, B. ; Heller, E. ; Ringel, S.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
New constant drain-current deep level optical/transient spectroscopy (CID-DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; hole traps; microwave field effect transistors; spectroscopy; wide band gap semiconductors; AlGaN-GaN; DLTS/DLOS method; RF stressed HEMT; drain current deep level optical/transient spectroscopy; frequency 10 GHz; high electron mobility transistors; spatially discriminating trap characterization methods; virtual gate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703396
Filename :
5703396
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370123
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