DocumentCode :
2370321
Title :
High performance single-grain Ge TFTs without seed substrate
Author :
Chen, Tao ; Ishihara, Ryoichi ; Mofrad, M. R Tajari ; Vollebregt, Sten ; van der Cingel, Johan ; van der Zwan, M. ; Schellevis, Hugo ; Beenakker, Kees
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilites are 3337cm2/Vs with on/off ratio of 108 @VDS=0.1V. Hole mobilities are 1719cm2/Vs with on/off ratio of 108 @VDS=0.05V. The high mobility is due to improved interface property and tensile stress.
Keywords :
electron mobility; substrates; thin film transistors; μ-Czochralski process; electron mobilites; high performance single-grain Ge TFT; hole mobilities; interface property; seed substrate; tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703404
Filename :
5703404
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370321
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