Ferroelectric Lumped Element Filter/Switch for Microwave Applications

Author

Wang, Xu ; Bao, Peng ; Lancaster, Michael J. ; Jackson, Tim J.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Birmingham, Birmingham

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

43

Lastpage

46

Abstract

This paper describes the experimental performance of a ferroelectric lumped element filter/switch grown on silicon substrate. The filtering/switching operation is based on the dc electric field controlled dielectric constant of a Ba_0.25Sr_0.75TiO₃ (BST) thin-film. The switch is made by changing the cut-off frequency of a low-pass filter. 18 dB isolation has been demonstrated under 15 V bias at 25 GHz with great consistency being observed among different samples. The properties of the BST thin-film has been extracted by comparing the electromagnetic full-wave simulation with the experimental measurements.

Keywords

barium compounds; ferroelectric devices; ferroelectric switching; ferroelectric thin films; low-pass filters; microwave filters; microwave switches; permittivity; strontium compounds; thin film devices; Ba_0.25Sr_0.75TiO₃; cut-off frequency; dielectric constant; electromagnetic full-wave simulation; ferroelectric lumped element filter; ferroelectric lumped element switch; frequency 25 GHz; low-pass filter; thin film; voltage 15 V; Binary search trees; Dielectric constant; Dielectric substrates; Ferroelectric materials; Filtering; Low pass filters; Microwave filters; Silicon; Strontium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751382

Filename

4751382