DocumentCode :
2370410
Title :
A 300MHz multi-banked, eDRAM macro featuring GND sense, bit-line twisting and direct reference cell write
Author :
Barth, J. ; Anand, D. ; Dreibelbis, J. ; Nelson, E.
Author_Institution :
IBM MicroElectronics
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
118
Lastpage :
427
Keywords :
Application specific integrated circuits; Bandwidth; Delay; Hardware; Libraries; Logic; Microelectronics; Protocols; Read-write memory; Redundancy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992171
Filename :
992171
Link To Document :
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