DocumentCode :
2370416
Title :
Submicron low-voltage organic transistors and circuits enabled by high-resolution silicon stencil masks
Author :
Ante, F. ; Letzkus, F. ; Butschke, J. ; Zschieschang, U. ; Kern, K. ; Burghartz, J.N. ; Klauk, H.
Author_Institution :
Max Planck Inst. for Solid State Res., Stuttgart, Germany
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Using high-resolution silicon stencil masks and employing a resist-free, solvent-free, low-temperature (90°C) fabrication process we have fabricated low-voltage top-contact organic thin-film transistors (TFTs) with a channel length down to 0.8 μm. To observe the scaling requirements and to alleviate short-channel effects, a thin gate dielectric with a thickness of 5.3 nm is employed. The p-channel TFTs have a record static performance, with a transconductance of 1 S/m, an on/off current ratio of 108, and a subthreshold swing of 100 mV/dec. Unipolar inverters based on p-channel TFTs with a channel length of 1 μm and gate-to-source and gate-to-drain overlaps of 2 μm respond to input signals with frequencies up to 1 MHz. Combining air-stable p-channel and n-channel TFTs we have also realized organic complementary ring oscillators with record low-voltage dynamic performance (signal delay of 30 μs per stage at a supply voltage of 3 V).
Keywords :
cryogenic electronics; dielectric thin films; elemental semiconductors; low-power electronics; masks; organic field effect transistors; silicon; thin film transistors; Si; high-resolution silicon stencil masks; low-temperature fabrication; n-channel TFT; organic complementary; p-channel TFT; ring oscillators; scaling requirements; short channel effects; size 5.3 nm; submicron low-voltage organic circuits; submicron low-voltage organic transistors; temperature 90 degC; thin gate dielectric; top-contact organic thin-film transistors; unipolar inverters; voltage 3 V;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703409
Filename :
5703409
Link To Document :
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