Title :
A quasi-matrix ferroelectric memory for future silicon storage
Author :
Nishihara, T. ; Ito, Y.
Author_Institution :
Sony Corporation
Keywords :
Capacitors; Costs; Degradation; Ferroelectric films; Ferroelectric materials; MOS devices; Nonvolatile memory; Random access memory; Silicon; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992174
