DocumentCode :
2370443
Title :
A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme
Author :
Mun-Kyu Choi ; Byung-Gil Jeon ; Nakwon Jang ; Byung-Jun Min ; Yoon-Jong Song ; Sung-Yung Lee ; Hyun-Ho Kim ; Dong-Jin Jung ; Heung-Jin Joo ; Kinam Kim
Author_Institution :
Samsung Electronics
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
124
Lastpage :
431
Keywords :
Consumer electronics; Detectors; Ferroelectric films; Ferroelectric materials; Latches; Low-noise amplifiers; Noise level; Nonvolatile memory; Operational amplifiers; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992175
Filename :
992175
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370443
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