DocumentCode
2370443
Title
A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme
Author
Mun-Kyu Choi ; Byung-Gil Jeon ; Nakwon Jang ; Byung-Jun Min ; Yoon-Jong Song ; Sung-Yung Lee ; Hyun-Ho Kim ; Dong-Jin Jung ; Heung-Jin Joo ; Kinam Kim
Author_Institution
Samsung Electronics
Volume
2
fYear
2002
fDate
7-7 Feb. 2002
Firstpage
124
Lastpage
431
Keywords
Consumer electronics; Detectors; Ferroelectric films; Ferroelectric materials; Latches; Low-noise amplifiers; Noise level; Nonvolatile memory; Operational amplifiers; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7335-9
Type
conf
DOI
10.1109/ISSCC.2002.992175
Filename
992175
Link To Document