A model for the RESET operation of electrochemical conducting bridge resistive memory (CB-ReRAM)

The RESET operation for electrochemical conducting bridge ReRAM involves complex, dynamic evolution of multiple mechanisms. In this work, the entire RESET process is modeled. Three different types of current are active during the RESET process: (i) ionic current, (ii) tunneling current, and (iii) Ohmic current. While ionic current is the dominant component that electrochemically removes the conducting bridge, we have also confirmed, by simulation and experiments, that tunneling current and Ohmic current consume most of the RESET power. To improve the efficiency and reduce RESET current, we propose a new device structure with a high work function tunneling layer to suppress the tunneling current.