Title :
Quantitative model for TMR and spin-transfer torque in MTJ devices
Author :
Datta, Deepanjan ; Behin-Aein, Behtash ; Salahuddin, Sayeef ; Datta, Supriyo
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We present a Non-Equilibrium Green´s Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ∥) and (4) out-of-plane torque (τ⊥) over a range of bias voltages, using a single set of three adjustable parameters. We believe our model is able to cover this diverse range of experiments.
Keywords :
Green´s function methods; magnetoresistive devices; torque; tunnelling magnetoresistance; MTJ devices; NEGF-based model; STT devices; TMR; differential resistances; in-plane torque; magnetic tunnel junctions; nonequilibrium Green´s function; out-of-plane torque; quantitative model; spin-transfer torque; tunnel magnetoresistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703417
