• DocumentCode
    2370615
  • Title

    Graphene-based fast electronics and optoelectronics

  • Author

    Avouris, Ph. ; Lin, Y.-M. ; Xia, F. ; Farmer, D.B. ; Wu, Y. ; Mueller, T. ; Jenkins, K. ; Dimitrakopoulos, C. ; Grill, A.

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.
  • Keywords
    field effect transistors; graphene; integrated optoelectronics; narrow band gap semiconductors; photodetectors; C; SiC; fast electronics; graphene; high frequency field-effect transistors; optoelectronics; photodetectors; wafer-scale utilization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703418
  • Filename
    5703418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370615