• DocumentCode
    2370649
  • Title

    0.13μm 210GHz fT SiGe HBTs - expanding the horizons of SiGe BiCMOS

  • Author

    Joseph, A. ; Coolbaugh, D. ; Harame, D. ; Freeman, C. ; Subbarma, S. ; Doherty, M. ; Bunn, J. ; Dickey, C. ; Greenberg, D. ; Groves, R. ; Meghelli, M. ; Rylyakov, A. ; Sorna, M. ; Schreiber, O. ; Herman, D. ; Tanji, T.

  • Author_Institution
    IBM, Essex Jct., VT
  • Volume
    2
  • fYear
    2002
  • fDate
    7-7 Feb. 2002
  • Firstpage
    138
  • Lastpage
    438
  • Abstract
    This article consists of a collection of slides from the author´s conference presentation. SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5μm. The key component is the SiGebase HBT whose performance (fT, fMAX) is improved to >200GHz in the 0.13μm generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed. See also digest page 180.
  • Keywords
    Annealing; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7335-9
  • Type

    conf

  • DOI
    10.1109/ISSCC.2002.992182
  • Filename
    992182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370649