DocumentCode :
2370649
Title :
0.13μm 210GHz fT SiGe HBTs - expanding the horizons of SiGe BiCMOS
Author :
Joseph, A. ; Coolbaugh, D. ; Harame, D. ; Freeman, C. ; Subbarma, S. ; Doherty, M. ; Bunn, J. ; Dickey, C. ; Greenberg, D. ; Groves, R. ; Meghelli, M. ; Rylyakov, A. ; Sorna, M. ; Schreiber, O. ; Herman, D. ; Tanji, T.
Author_Institution :
IBM, Essex Jct., VT
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
138
Lastpage :
438
Abstract :
This article consists of a collection of slides from the author´s conference presentation. SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5μm. The key component is the SiGebase HBT whose performance (fT, fMAX) is improved to >200GHz in the 0.13μm generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed. See also digest page 180.
Keywords :
Annealing; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Resistors; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992182
Filename :
992182
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370649
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