• DocumentCode
    2370683
  • Title

    A new approach to on-chip probing in the MM-wave to THz range

  • Author

    Larsen, M.J.H. ; Brown, E.R.

  • Author_Institution
    Depts. of Electr. Eng. & Phys., Wright State Univ., Fairborn, OH, USA
  • fYear
    2012
  • fDate
    25-27 July 2012
  • Firstpage
    28
  • Lastpage
    30
  • Abstract
    One of the bigger obstacles in the development of THz devices and integrated circuits is their electrical characterization in the upper-millimeter to terahertz range above 100 GHz. Today´s technology is mainly based on metal-to-metal, dc-coupled contact probes. This technology is, however, expensive and fragile, and is difficult to scale to higher frequencies. This paper concerns contact-free probes that are (ac) coupled to the device or circuit-under-test by the polarization current rather than the conduction current. Numerical simulations are carried out to 1.0 THz and the probe coupling is found to be around -26 dB, with a bandwidth of at least 500 GHz.
  • Keywords
    numerical analysis; submillimetre wave integrated circuits; terahertz wave devices; THz devices; contact-free probes; dc-coupled contact probes; electrical characterization; frequency 1 THz; integrated circuits; metal-to-metal probes; numerical simulations; on-chip probing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference (NAECON), 2012 IEEE National
  • Conference_Location
    Dayton, OH
  • ISSN
    0547-3578
  • Print_ISBN
    978-1-4673-2791-6
  • Type

    conf

  • DOI
    10.1109/NAECON.2012.6531021
  • Filename
    6531021