• DocumentCode
    2370686
  • Title

    Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

  • Author

    Nagashio, K. ; Yamashita, T. ; Fujita, J. ; Nishimura, T. ; Kita, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ~10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.
  • Keywords
    Raman spectra; carrier mobility; field effect transistors; graphene; oxidation; plasma materials processing; silicon compounds; thin films; C-SiO2; FET mobility; Raman spectra; SiO2-Si; field effect transistor mobility; mechanically exfoliated graphene film; plasma treatment; reoxidization; transport properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703421
  • Filename
    5703421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370686