Gigahertz ambipolar frequency multiplier based on CVD graphene

Author

Wang, Han ; Hsu, Allen ; Kim, Ki Kang ; Kong, Jing ; Palacios, Tomas

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2010

fDate

6-8 Dec. 2010

Abstract

Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.

Keywords

chemical vapour deposition; field effect transistors; frequency multipliers; graphene; mixed analogue-digital integrated circuits; CVD graphene; CVD grown graphene transistors; RF performance; ambipolar transport; fabrication processes; frequency 1.4 GHz; gigahertz ambipolar frequency multiplier; graphene ambipolar frequency multiplier; graphene frequency multipliers; graphene-based ambipolar devices; mixed-signal applications; spectral purity; wafer-scale graphene synthesis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703423

Filename

5703423