• DocumentCode
    2370765
  • Title

    Ultra-low series resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D electrodes for advanced CMOS platform

  • Author

    Kuroda, Rihito ; Tanaka, Hiroaki ; Nakao, Yukihisa ; Teramoto, Akinobu ; Miyamoto, Naoto ; Sugawa, Shigetoshi ; Ohmi, Tadahiro

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    A formation technology of ultra-low series resistance CMOS source/drain (S/D) electrodes is developed. The silicide/silicon contact resistivity (Rc) of 8.0×10-10 Ω·cm2 and the electrode´s sheet resistance (Rsheet) of less than 5.0 Ω/□ are achieved for both n- and pMOS using W/ErSi2 and W/Pd2Si metal stacked silicide structures. For the first time, FD-SOI CMOS with the developed S/D electrodes was fabricated and the ring oscillator speed performance was evaluated.
  • Keywords
    CMOS integrated circuits; contact resistance; erbium compounds; lead compounds; oscillators; silicon-on-insulator; tungsten; FD-SOI CMOS; W-ErSi2; W-Pd2Si; W/ErSi2/n+-Si source/drain electrode; W/Pd2Si/p+-Si source/drain electrode; advanced CMOS platform; contact resistivity; formation technology; ring oscillator; sheet resistance; ultra-low series resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703425
  • Filename
    5703425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370765