DocumentCode
2370904
Title
Electromigration testing using modulated reflectance imaging
Author
Bivas, Albert ; Day, Mary E.
Author_Institution
Therma-Wave Inc., Fremont, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
228
Lastpage
234
Abstract
A new nondestructive technique, the modulated reflectance or thermal wave imaging, was used to observe the formation of defects at the surface and under the surface of metal lines, after successive steps of conventional accelerated electromigration (EM) stress. The change in film morphology and the growth of subsurface defects was correlated with the EM stress data and with the ultimate time to failure of the lines. As the wafer was heated during the EM TEST a set of lines that were not electrically stressed were also imaged at each step, in order to separate the electrical and thermal stress components. Detection and analysis of the defect growth, at early stages in the stress process, using the modulated reflectance method, could be used towards the prediction of metalization lifetime and reliability, reducing considerably the duration of stress tests
Keywords
VLSI; electromigration; environmental testing; life testing; metallisation; reliability; VLSI; accelerated electromigration stress test; change in film morphology; defects formation observations; growth of subsurface defects; modulated reflectance imaging; multilevel interconnection; nondestructive technique; prediction of metalization lifetime; reliability issues; reliability prediction; thermal wave imaging; time to failure; Acceleration; Electromigration; Optical films; Photothermal effects; Reflectivity; Resistance heating; Surface morphology; Surface waves; Testing; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.152992
Filename
152992
Link To Document