Title :
Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
Author :
Degraeve, R. ; Roussel, Ph ; Goux, L. ; Wouters, D. ; Kittl, J. ; Altimime, L. ; Jurczak, M. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper demonstrates the switching of several conductive filaments in RRAM using a small-size FUSI gate NMOS transistor. The theory for predicting the maximum applicable Vset is elaborated. Modeling of filament conduction with a quantum mechanical model reveals that the reset operation corresponds to a narrowing of the filament.
Keywords :
MOSFET; electric breakdown; random-access storage; conduction mechanism; filament conduction; generic learning; multiple filaments; quantum mechanical model; resistive RAM; small-size FUSI gate NMOS transistor; switching mechanism; time-dependent dielectric breakdown;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703438
