Title :
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
Author :
Padilla, A. ; Burr, G.W. ; Virwani, K. ; Debunne, A. ; Rettner, C.T. ; Topuria, T. ; Rice, P.M. ; Jackson, B. ; Dupouy, D. ; Kellock, A.J. ; Shelby, R.M. ; Gopalakrishnan, K. ; Shenoy, R.S. ; Kurdi, B.N.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design for high endurance.
Keywords :
antimony compounds; crystallisation; germanium compounds; phase change memories; GST-based phase change memory device; GeSbTe; crystallization process; elemental segregation; voltage polarity effects;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703444
