Title :
60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
Author :
Kim, Tae-Woo ; Kim, Dae-Hyun ; Alamo, Jesus A del
Author_Institution :
Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
Abstract :
We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloyed Mo-based ohmic contacts show excellent thermal stability up to 600°C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with gm = 2.1 mS/μm at VDS = 0.5 V, and fT = 580 GHz and fmax = 675 GHz at VDS = 0.6 V. These are all record or near record values for this gate length.
Keywords :
III-V semiconductors; capacitance; electric resistance; gallium arsenide; high electron mobility transistors; indium compounds; molybdenum; ohmic contacts; thermal stability; InGaAs; Mo; frequency 580 GHz; frequency 675 GHz; high electron mobility transistor; high-frequency characteristic; ohmic contacts; parasitic capacitance gate design; self-aligned gate technology; size 60 nm; thermal stability; voltage 0.5 V; voltage 0.6 V;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703454