High-Efficiency Four-Stage Class-E Doherty Amplifier for W-CDMA Base Stations

Author

Takahashi, Eiki ; Ishikawa, Takaaki ; Kashimura, K. ; Adachi, Nobuyuki

Author_Institution

Japan Radio Co., Ltd., Fujimino

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

234

Lastpage

237

Abstract

A high-efficiency four-stage class-E Doherty power amplifier for W-CDMA base stations has been developed. Its final stage amplifier, the symmetrical Doherty amplifier using an internally class-E matched GaN packaged device, achieves 15 dB gain and 58.4% CW drain efficiency at 6 dB output back-off from 170 W (52.3 dBm) saturated power. The four-stage 60 dB-gain amplifier, including an output isolator, achieves 42.7% overall efficiency at 28 W (44.5 dBm) average output power, while maintaining -52 dBc ACLR at 5 MHz offset with DPD for a WCDMA 4FA signal with 6.8 dB PAPR measured at .01% probability on CCDF.

Keywords

III-V semiconductors; code division multiple access; gallium compounds; microwave isolators; packaging; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; CCDF; GaN; GaN packaged device; W-CDMA; class-E Doherty amplifier; drain efficiency; efficiency 58.4 percent; gain 15 dB; power 170 W; power 28 W; power amplifier; Base stations; Gain; Gallium nitride; High power amplifiers; Isolators; Multiaccess communication; Packaging; Peak to average power ratio; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751431

Filename

4751431