DocumentCode
2371461
Title
Boosting short circuit current with rationally designed periodic Si nanopillar surface texturing for thin film solar cell
Author
Wong, S.M. ; Yu, H.Y. ; Li, Y.L. ; Li, J.S. ; Wang, F. ; Yang, M.F. ; Singh, N. ; Lo, Patrick G Q ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2010
fDate
6-8 Dec. 2010
Abstract
This work experimentally investigates the impact of the large-scale rational-designed periodic Si nanopillar (SiNP) array structural parameters (e.g. diameter/ periodicity/ height) on the reflectance and hence the absorption of the SiNP array for the first time, and the results are in consistence with our theoretical prediction. Owing to the significantly enhanced light absorption of the optimized SiNP array texturing, a short circuit current density (Jsc) of 34.3mA/cm2 is realized on planar p-n SiNP surface textured solar cell, which is the highest to date among reported Si nanowire (SiNW)/SiNP based solar cells. This is in distinct comparison to Jsc of 18.1 mA/cm2 demonstrated on the solar cell without SiNP, which makes the SiNP array a suitable and promising texturing technology for thin film photovoltaic application (alike the micrometer-scale surface texturing commonly used in Si wafer solar cell).
Keywords
elemental semiconductors; nanostructured materials; nanowires; semiconductor thin films; short-circuit currents; solar cells; Si; light absorption; nanopillar array structural parameters; nanowire; short circuit current; surface texturing; thin film photovoltaic application; thin film solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703456
Filename
5703456
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