DocumentCode :
2371461
Title :
Boosting short circuit current with rationally designed periodic Si nanopillar surface texturing for thin film solar cell
Author :
Wong, S.M. ; Yu, H.Y. ; Li, Y.L. ; Li, J.S. ; Wang, F. ; Yang, M.F. ; Singh, N. ; Lo, Patrick G Q ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
This work experimentally investigates the impact of the large-scale rational-designed periodic Si nanopillar (SiNP) array structural parameters (e.g. diameter/ periodicity/ height) on the reflectance and hence the absorption of the SiNP array for the first time, and the results are in consistence with our theoretical prediction. Owing to the significantly enhanced light absorption of the optimized SiNP array texturing, a short circuit current density (Jsc) of 34.3mA/cm2 is realized on planar p-n SiNP surface textured solar cell, which is the highest to date among reported Si nanowire (SiNW)/SiNP based solar cells. This is in distinct comparison to Jsc of 18.1 mA/cm2 demonstrated on the solar cell without SiNP, which makes the SiNP array a suitable and promising texturing technology for thin film photovoltaic application (alike the micrometer-scale surface texturing commonly used in Si wafer solar cell).
Keywords :
elemental semiconductors; nanostructured materials; nanowires; semiconductor thin films; short-circuit currents; solar cells; Si; light absorption; nanopillar array structural parameters; nanowire; short circuit current; surface texturing; thin film photovoltaic application; thin film solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703456
Filename :
5703456
Link To Document :
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