DocumentCode
2371473
Title
Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems
Author
Lu, J. ; Liu, W. ; van der Werf, C.H.M. ; Kovalgin, A.Y. ; Sun, Y. ; Schropp, R.E.I. ; Schmitz, J.
Author_Institution
Enschede, Univ. of Twente, Enschede, Netherlands
fYear
2010
fDate
6-8 Dec. 2010
Abstract
Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copper-indium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing.
Keywords
CMOS integrated circuits; amorphous semiconductors; copper; elemental semiconductors; gallium; indium; micromechanical devices; silicon; solar cells; CMOS; amorphous-silicon solar cells; autonomous microsystems; copper-indium-gallium-selenide cells; mechanical stress; metal ion contamination; photovoltaic processing; process temperature; surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703457
Filename
5703457
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