DocumentCode
2371561
Title
A modelling approach for dual mode thyristor devices
Author
Palmer, P.R. ; Githiari, A.N.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
1998
fDate
21-23 Sep 1998
Firstpage
252
Lastpage
257
Abstract
This paper presents an approach (the RC line method) that is suitable for accurately modelling various types of dual mode thyristors (by adopting suitable modifications). This is the first time the method has been used on the popular simulator, PSPICE. Results are presented illustrating the approach as applied to a particular type of dual mode thyristor, the MOS and Bipolar Gated Thyristor (MBGT). The results obtained with the 7 RC cells are seen to be quite acceptable and in this case have excellent accuracy in most features of the waveforms
Keywords
insulated gate bipolar transistors; MOS and Bipolar Gated Thyristor; PSPICE; RC line method; dual mode thyristor devices; modelling;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 1998. Seventh International Conference on (Conf. Publ. No. 456)
Conference_Location
London
ISSN
0537-9989
Print_ISBN
0-85296-704-7
Type
conf
DOI
10.1049/cp:19980533
Filename
732049
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