DocumentCode :
2371597
Title :
Full band assessment of phonon-limited mobility in Graphene NanoRibbons
Author :
Betti, A. ; Fiori, G. ; Iannaccone, G.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
We present a full band investigation of electron-phonon interaction in Graphene NanoRibbons (GNRs) by exploiting a tight-binding description within the deformation potential approximation. We show that a full band approach is required to obtain accurate results: mobility as high as 800 cm2/Vs at room temperature can be achieved for 1 nm-wide ribbons, more than one order of magnitude higher than that obtainable in silicon nanowires, but still not enough to ensure ballistic transport in GNR-based devices.
Keywords :
ballistic transport; electron-phonon interactions; graphene; nanostructured materials; nanowires; silicon; ballistic transport; deformation potential approximation; electron-phonon interaction; full band assessment; graphene nanoribbons; phonon-limited mobility; silicon nanowires; temperature 293 K to 298 K;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703462
Filename :
5703462
Link To Document :
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