Title :
Computational study of graphene nanoribbon FETs for RF applications
Author :
Imperiale, I. ; Bonsignore, S. ; Gnudi, A. ; Gnani, E. ; Reggiani, S. ; Baccarani, G.
Author_Institution :
Dept. of Electron., Univ. of Bologna, Bologna, Italy
Abstract :
The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
Keywords :
energy gap; field effect transistors; graphene; high-k dielectric thin films; phonons; semiconductor doping; GNR-FET; RF application; acoustic phonon; asymmetrical doping; band-gap; full-quantum atomistic model; graphene nanoribbon; high-κ dielectric; high-frequency analog; saturation region; size 10 nm to 15 nm;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703463
