Title :
GaAs: Gap state passivation at interfaces and surfaces
Author :
Robertson, J. ; Lin, L.
Author_Institution :
Eng. Dept, Cambridge Univ., Cambridge, UK
Abstract :
Electronic structure calculations on surface, interface and defect configurations of GaAs describe passivation of gap states within the electron counting rule. We find that the critical defects are As-As dimers, which follow chemical trends and give gap states at GaAs-oxide interfaces because they are 4-fold not 3-fold coordinated as they are on surfaces. GaAs interface defects cannot easily be passivated independently.
Keywords :
III-V semiconductors; electronic structure; energy gap; gallium arsenide; interface states; passivation; surface states; As-As dimers; GaAs; GaAs interface defects; GaAs-oxide interfaces; chemical trends; critical defects; defect configuration; electron counting rule; electronic structure calculations; gap state passivation; interface configuration; surface configuration;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703466
