Title :
Test chip fabrication with extreme ultraviolet lithography for high-volume manufacturing
Author :
Mori, I. ; Aoyama, H.
Author_Institution :
Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba, Japan
Abstract :
Since launching the project to get extreme ultraviolet lithography (EUVL) ready for production, we focused on two issues: test chip fabrication down to a half pitch (hp) of 28 nm to assess an applicability of EUVL to the fabrication of logic devices (BEOL test chip); and the manufacturability of EUVL, for which we used a special PL test site to assess the electrical yield. Furthermore, we examined the potential of EUVL for device fabrication at sizes beyond hp 24 nm.
Keywords :
nanofabrication; semiconductor device manufacture; ultraviolet lithography; BEOL test chips; EUVL; back-end-of-line test chip; electrical yield; extreme ultraviolet lithography; high-volume manufacturing; logic devices; test chip fabrication;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703467