DocumentCode :
2371700
Title :
A 8W High efficiency X-band Power pHEMT amplifier
Author :
Huet, T. ; Gruenenpuett, J. ; Ouarch, Z. ; Bouw, D. ; Serru, V. ; Camiade, M. ; Chang, C. ; Chaumas, P.
Author_Institution :
Modelling & Meas. Dept., United Monolithic Semicond. S.A.S, Orsay
fYear :
2008
fDate :
27-31 Oct. 2008
Firstpage :
289
Lastpage :
292
Abstract :
A monolithic two-stage high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS Power PHEMT technology called PPH25X in term of breakdown, and the adapted design regarding output mismatch and overdrive explain the performances of this device. The MMIC HPA, with a surface of 14.6 mm2, provides 8 W output power in pulsed mode associated to a PAE of about 45% at ambient temperature and can operate at 6 dB compression in a wide frequency bandwidth (35% of frequency band). The good level of performance, the low sensitivity to the environment make this amplifier an excellent candidate for X band applications such as phased array active antennas.
Keywords :
MMIC power amplifiers; microwave antenna arrays; power HEMT; MMIC HPA; UMS power PHEMT technology; efficiency X-band power pHEMT amplifier; frequency 7 GHz to 12.5 GHz; high efficiency amplifier; high robustness amplifier; monolithic two-stage high power amplifier; phased array active antennas; power 8 W; Electric breakdown; Frequency; High power amplifiers; MMICs; PHEMTs; Phased arrays; Power amplifiers; Power generation; Pulse amplifiers; Robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
Type :
conf
DOI :
10.1109/EUMC.2008.4751445
Filename :
4751445
Link To Document :
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