DocumentCode
2371713
Title
Thermal hillocks on half-micron aluminum lines: the next reliability issue?
Author
Pico, Carey A. ; Bonifield, Tom D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Berkeley, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
256
Lastpage
257
Abstract
Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 μm. The authors find that thermal hillocks are present on lines having linewidths greater than 3 μm, absent on lines having linewidths between 0.8 μm and 3 μm, and, again, present on lines having linewidths of 0.6 μm. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas
Keywords
VLSI; aluminium alloys; metallisation; reliability; 0.6 to 0.5 micron; 3 micron; Al alloys; VLSI; dimensions; line hillocks; linewidths; multilevel interconnection; reliability issues; sinter process; thermal hillocks; Aluminum; Computer science; Frequency; Grain boundaries; Grain size; Instruments; Metallization; Reliability engineering; Resists; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.152996
Filename
152996
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