• DocumentCode
    2371713
  • Title

    Thermal hillocks on half-micron aluminum lines: the next reliability issue?

  • Author

    Pico, Carey A. ; Bonifield, Tom D.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Berkeley, CA, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    256
  • Lastpage
    257
  • Abstract
    Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 μm. The authors find that thermal hillocks are present on lines having linewidths greater than 3 μm, absent on lines having linewidths between 0.8 μm and 3 μm, and, again, present on lines having linewidths of 0.6 μm. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas
  • Keywords
    VLSI; aluminium alloys; metallisation; reliability; 0.6 to 0.5 micron; 3 micron; Al alloys; VLSI; dimensions; line hillocks; linewidths; multilevel interconnection; reliability issues; sinter process; thermal hillocks; Aluminum; Computer science; Frequency; Grain boundaries; Grain size; Instruments; Metallization; Reliability engineering; Resists; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.152996
  • Filename
    152996