Title :
GaN MMIC Power Amplifiers for S-band and X-band
Author :
Suijker, Erwin M. ; Sudow, Mattias ; Fagerlind, Martin ; Rorsman, Niklas ; de Hek, A.P. ; van Vliet, F.E.
Author_Institution :
TNO Defence Security & Safety, The Hague
Abstract :
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 mum HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; AlGaN-GaN; MMIC power amplifiers; S-band; X-band; efficiency 28 percent; frequency 3 GHz to 4 GHz; power 4.8 W; power 5.6 W; size 0.25 mum; Etching; Gallium nitride; Gold; HEMTs; MMICs; MODFETs; Passivation; Power amplifiers; Power generation; Silicon carbide;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751447
