High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

Author

Nogami, T. ; Bolom, T. ; Simon, A. ; Kim, B-Y ; Hu, C-K ; Tsumura, K. ; Madan, A. ; Baumann, F. ; Wang, Y. ; Flaitz, P. ; Parks, C. ; DeHaven, P. ; Davis, R. ; Zaitz, M. ; Lawrence, B. St ; Murphy, R. ; Tai, L. ; Molis, S. ; Rhee, S-H ; Usui, T. ; Cabral,

Author_Institution

Albany Nano Technol. Res. Center, IBM, Albany, NY, USA

fYear

2010

fDate

6-8 Dec. 2010

Abstract

A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods. CuMn was confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) reliability for the same Cu line resistance (R). Both low R and high reliability (EM, SM, and TDDB) were achieved. Improved extendibility of CuMn relative to CuAl was also supported by studies of alloy interactions with advanced liner materials Ru and Co, and by enhancement of ultra-thin TaN barrier performance.

Keywords

aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; manganese alloys; tantalum compounds; vapour deposited coatings; BEOL; CuAl; CuMn; PVD process; TaN; back end of line technology; electromigration reliability; liner materials; seed layer; size 32 nm; ultra low-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703471

Filename

5703471