A 1000 V merged P-N/Schottky (MPS) high-speed low-loss power rectifier

This paper demonstrates, for the first time, the ability to fabricate low-loss high-speed MPS power rectifiers that can block reverse voltages in excess of 1000 V. Controlling the characteristics of the 1000 V MPS by varying the relative device active areas of P+/N- and Schottky regions is also demonstrated. This principal is the same as reported by Tu and Baliga (see IEEE Electron Device Lett. vol.EDL-7, p.1307-15, 1993), but is extended to the higher voltage regime. The impact of different MPS Schottky active areas on reverse leakage and switching characteristics is also investigated. Both simulation and experimental data are presented to demonstrate the benefits of using MPS rectifiers as high voltage low-loss fast switching power rectifiers