Title :
Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology
Author :
Griffoni, A. ; Chen, S.-H. ; Thijs, S. ; Linten, D. ; Scholz, M. ; Groeseneken, G.
Author_Institution :
Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium
Abstract :
The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device optimization is proposed, which improves the CDM ESD robustness up to 2.7x, unchanging the HBM ESD robustness.
Keywords :
CMOS integrated circuits; electrostatic discharge; low-power electronics; semiconductor device models; thyristors; CMOS technology; charged device model; device optimization; electrostatic discharge; gate-oxide damage; laterally diffused nMOS; silicon controlled rectifier;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703483
