DocumentCode
2372332
Title
Improved hot carrier reliability of submicron MOS devices by modifying the PECVD IMO film
Author
Jain, Vivek ; Pramanik, Dipankar ; Nariani, Subhash R. ; Chang, K.Y.
Author_Institution
VLSI Technol. Inc., San Jose, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
272
Lastpage
278
Abstract
The impact of the PECVD IMO film on hot carrier reliability of sub-micron MOS devices has been studied. It has been shown, for the first time, that modifying the PECVD IMO film can result in more than an order of magnitude improvement in the hot carrier reliability. The study underscores the importance of backed processing on the device reliability and provides direction for improving device reliability
Keywords
MOS integrated circuits; VLSI; chemical vapour deposition; hot carriers; metallisation; reliability; MOS IC; PECVD IMO film; VLSI; backed processing; device reliability; device reliability improvement; hot carrier reliability; multilevel interconnection; process modification; reliability issues; submicron MOS devices; Degradation; Electrons; Hot carriers; MOS devices; Optical films; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.152999
Filename
152999
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