Title :
High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz
Author :
Kuroda, Kenta ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu
Abstract :
We report on the design, fabrication, and measurement results of a high-efficiency class-F amplifier using an AlGaN/GaN HEMT at 5.7 GHz. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum drain efficiency of 77.1%, maximum power added efficiency of 68.7%, and output power of up to 34.5 dBm at 5.69 GHz.
Keywords :
HF amplifiers; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; GaN-HEMT class-F amplifier; frequency 5.7 GHz; low-loss resin microstrip substrate; maximum drain efficiency; Aluminum gallium nitride; Fabrication; Gallium arsenide; Gallium nitride; HEMTs; High power amplifiers; Microstrip; Power generation; Resins; Voltage;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751483
