Title :
Effect of substrate-drop parameters on nanowhiskers morphology
Author :
Nastovjak, Alla G. ; Neizvestny, Igor G. ; Shwartz, Nataliya L. ; Sheremet, Evgeniya S. ; Yanovitska, Zoya Sh
Author_Institution :
Inst. of Semicond. Phys. SB RAS, Novosibirsk
Abstract :
Si nanowhiskers (NW) morphology was studied by Monte Carlo simulation. It was found out that different substrate-seed wetting conditions can lead to growth of straight, curved or tube-like NWs. Initial substrate-seed interface orientation and orientation of growing NW sidewall facets determine growth directions of model NWs.
Keywords :
Monte Carlo methods; elemental semiconductors; nanostructured materials; silicon; whiskers (crystal); Monte Carlo simulation; Si; kinetic MC simulation; silicon nanowhiskers morphology; substrate-drop parameters; substrate-seed wetting conditions; Gold; Kinetic theory; Monte Carlo methods; Semiconductor materials; Silicon; Substrates; Surface morphology; Surface tension; Temperature dependence; Temperature distribution; Monte Carlo; nanowhisker;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585841
