DocumentCode :
2373083
Title :
Monte Carlo simulation of phase separation in SiOx layers
Author :
Mzhelskiy, Ivan V. ; Shwartz, Nataliya L. ; Yanovitskaja, Zoya Sh
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fYear :
2008
fDate :
1-5 July 2008
Firstpage :
45
Lastpage :
47
Abstract :
Results of Monte Carlo simulation of SiOx (0 les x les 1) layers annealing are presented. After annealing SiOx layers exhibit a tendency to pore formation. These pores separate fragments of well-ordered stochiometric dioxide matrix and silicon phase. Excess silicon precipitates in the pores in nanocrystal form.
Keywords :
Monte Carlo methods; annealing; insulating thin films; nanoporous materials; phase separation; precipitation; silicon; silicon compounds; stoichiometry; Monte Carlo simulation; SiOx; annealing; nanocrystal; phase separation; pore formation; silicon precipitation; stochiometric dioxide matrix; Atomic layer deposition; Lattices; Monte Carlo methods; Nanocrystals; Optical films; Refractive index; Silicon; Simulated annealing; Substrates; Temperature; Monte Carlo; SiOx layers nanocrystals; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
ISSN :
1815-3712
Print_ISBN :
978-5-7782-0893-3
Type :
conf
DOI :
10.1109/SIBEDM.2008.4585842
Filename :
4585842
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2373083
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