Title :
GaN Islands density growth kinetics on (0001) AlN surface by Ammonia molecular-beam epitaxy
Author :
Nikitin, Andrey N. ; Mansurov, Vladimir G. ; Galitsyn, Yuriy G. ; Zhuravlev, Konstantin S.
Author_Institution :
Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk
Abstract :
At the present work 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The initial stages of the GaN growth on the flat AlN surface were monitored by a real-time reflection high-energy electron diffraction (RHEED) technique. Exponential 3D-nucleation kinetics of GaN was experimentally revealed. Experimental results are discussed in the frame of scaling equation for the islands density.
Keywords :
III-V semiconductors; aluminium compounds; ammonia; electron diffraction; gallium compounds; island structure; molecular beam epitaxial growth; nucleation; reaction kinetics; surface structure; wide band gap semiconductors; 3D nucleation kinetics; AlN; GaN; NH3; RHEED; aluminum nitride (0001) surface; ammonia molecular-beam epitaxy; density growth kinetics; gallium nitride islands; island density; reflection high energy electron diffraction; scaling equation; Diffraction; Electrons; Gallium nitride; Kinetic theory; Molecular beam epitaxial growth; Monitoring; Physics; Reflection; Substrates; Temperature; MBE; heterogeneous nucleation; kinetics;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585843
