Title :
The Homoepitaxy GaAs on (001)-β(2×4) surface
Author :
Dmitriev, Dmitriy V. ; Galitsyn, Yuriy G. ; Moshenko, Sergey P. ; Toropov, Alexander I.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk
Abstract :
This study aims to analyze the mechanism of 2D growth of crystals via the homoepitaxial growth of GaAs on the (001)-beta(2times4) surface by molecular beam epitaxy. The behavior of the full diffraction pattern from RHEED which indicates layer-by-layer growth is analyzed. The equation of state of the growing surface is derived in the context of the mean field theory. Results show that the homoepitaxy of GaAs is considered as a 2D first-order phase transition.
Keywords :
III-V semiconductors; equations of state; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; 2D crystal growth; 2D first-order phase transition; GaAs; RHEED; diffraction pattern; equation of state; homoepitaxial growth; layer-by-layer growth; mean field theory; molecular beam epitaxy; Crystals; Diffraction; Electron beams; Epitaxial growth; Filling; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical reflection; Physics;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585847
