Title :
Photoelectron Emission and Secondary Electron Emission Characteristics of Cesiated p-type GaN
Author :
Yater, J.E. ; Shaw, J.L. ; Jensen, K.L. ; Feldman, D.W. ; Moody, N. ; O´Shea, P.G.
Author_Institution :
Naval Res. Lab.
Abstract :
The emission characteristics of a cesiated p-type GaN sample are examined as a function of surface treatment, time following cesiation, and sample heating. The yield and energy distribution of both photoemitted electrons and secondary electrons are examined and correlated with the GaN surface properties
Keywords :
III-V semiconductors; caesium; gallium compounds; photoelectron spectra; photoemission; surface treatment; wide band gap semiconductors; GaN; anegative electron affinity; cesiation; photocathode; photoelectron emission; photoemitted electrons; sample heating; secondary electron emission; surface treatment; Cathodes; Electron emission; Free electron lasers; Gallium nitride; Optical pulses; Photonic band gap; Robustness; Surface contamination; Surface emitting lasers; Surface treatment; GaN; negative electron affinity; photocathode; photoemission; secondary electrons;
Conference_Titel :
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0108-9
DOI :
10.1109/IVELEC.2006.1666368
