Title :
Curvature-corrected low-noise sub-bandgap reference in 28 nm CMOS technology
Author :
Bowers, Derek F. ; Modica, E.J.
Author_Institution :
Analog Devices Inc., San Jose, CA, USA
Abstract :
A sub-bandgap circuit architecture employed to achieve a precision reference in 28 nm CMOS technology is described. The 500 mV voltage reference exhibits <; 10 ppm/°C drift from -40 to 125°C and 5.5 μV of root-mean-square (RMS) noise in a 0.1-10 Hz bandwidth, dissipates 500 μW of power on a 1.2 V supply and occupies 0.09 mm2.
Keywords :
CMOS integrated circuits; reference circuits; CMOS technology; RMS noise; bandwidth 0.1 Hz to 10 Hz; curvature-corrected low-noise sub-bandgap reference; power 500 muW; precision reference; root-mean-square noise; size 28 nm; sub-bandgap circuit architecture; temperature -40 degC to 125 degC; voltage 1.2 V; voltage 5.5 muV; voltage 500 mV;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.3952
