DocumentCode :
2373312
Title :
Silicon thermal oxidation models comparison used in TCAD Sentaurus process and fact
Author :
Kuznetsov, Dmitry O.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fYear :
2008
fDate :
1-5 July 2008
Firstpage :
88
Lastpage :
90
Abstract :
The present paper deal with research and comparison of models of thermal oxidation of the silicon, used in TCAD Sentaurus Process and Fact. Data comparative analysis of modelling of typical industrial modes is done. Conclusion concerning models urgency and applicability is made.
Keywords :
elemental semiconductors; oxidation; silicon; technology CAD (electronics); Si; TCAD sentaurus process and fact; silicon thermal oxidation models; Atmospheric modeling; Attenuation; Conferences; Data analysis; Mathematical model; Oxidation; Semiconductor device modeling; Semiconductor process modeling; Silicon compounds; Software packages; Fact; Sentaurus process; TCAD; modeling; thermal oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
ISSN :
1815-3712
Print_ISBN :
978-5-7782-0893-3
Type :
conf
DOI :
10.1109/SIBEDM.2008.4585855
Filename :
4585855
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2373312
بازگشت