Title :
Step coverage evaluation of copper films prepared by magnetron sputtering
Author :
Park, Y.H. ; Chung, A.H. ; Ward, M.A.
Author_Institution :
Process Lab., ULVAC North America Corp., Fremont, CA, USA
Abstract :
Sputtered copper was investigated with emphasis on step coverage over difficult 1 μm via holes with aspect ratio of unity. The bottom filling in the hole was greater with Cu when compared with aluminum. Cu sidewall coverage was continuous without voids. Results are discussed in terms of the angular distribution of sputtered Cu and Al and relative mass to argon. Other physical properties of Cu are presented
Keywords :
VLSI; copper; metallisation; sputter deposition; sputtered coatings; 1 micron; Cu sidewall coverage; Cu sputtered films; VLSI; angular distribution of sputtered Cu; aspect ratio; bottom filling; conformal films; magnetron sputtering; multilevel interconnection; physical properties; reliability issues; step coverage; via holes; Aluminum; Argon; Artificial intelligence; Conductivity; Copper; Filling; Inorganic materials; Metallization; Sputtering; X-ray scattering;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153004
