Influence of the impurity fluctuations on the electronic and transport processes in doping superlattices

Author

Ushakov, Dmitrii V. ; Kononenko, Valerii K. ; Man, Ivan S.

Author_Institution

Belarussian State Univ., Minsk

Volume

2

fYear

2003

fDate

16-20 Sept. 2003

Firstpage

32

Abstract

In the paper, the influence of high doping on the energy spectrum and electron transport characteristics of n-i-p-i crystals is determined taking into account the Gaussian and exponential character of the fluctuated energy states. Influence of the impurity correlation on the D/mu ratio is examined in detail. Data of self-consistent calculations of the Schrodinger and Poisson´s equations are presented for different temperatures of the crystal

Keywords

Poisson equation; Schrodinger equation; optical materials; quantum optics; semiconductor doping; Gaussian character; Poisson´s equation; Schrodinger equation; doping superlattice; electron transport characteristic; electronic process; energy spectrum; exponential character; fluctuated energy state; impurity correlation; impurity fluctuation; n-i-p-i crystal; self-consistent calculation; transport process; Electrons; Fluctuations; Physics; Radiative recombination; Semiconductor device doping; Semiconductor impurities; Semiconductor superlattices; Tail; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on

Conference_Location

Alushta, Crimea

Print_ISBN

0-7803-7948-9

Type

conf

DOI

10.1109/CAOL.2003.1251255

Filename

1251255