Title :
Photoelectrical processes in spectroselective photosensitive sells based on three bulk integrated photodiodes
Author :
Ignatjeva, Elena A. ; Khainovskii, Vladimir I. ; Uzdovskii, Valerii V.
Author_Institution :
Moscow Inst. of Electron. Technol., Moscow
Abstract :
The study deals with photoelectrical processes in photosensitive structures based on three bulk integrated p-n junctions. In this work there was studied the distribution of electrical potential and the tension of electrical field as well as the absorption of optical radiation in the space charge region (SCR) of n-p-n-p structure. There were studied the processes of charge accumulation and spectral characteristics of photosensitivity in the bulk integrated n- and p- type photosensitive structures; there were received constructive parameters of semiconductor layers and permitted values of directive voltages and considered values of noise characteristics and circuit peculiarities of photosensitive sell.
Keywords :
electric potential; light absorption; p-i-n photodiodes; p-n junctions; photoelectricity; space charge; directive voltages; electrical field; electrical potential; integrated p-n junctions; n-p-n-p structure; optical radiation absorption; photoelectrical processes; photosensitive structures; photosensitivity; semiconductor layers; space charge region; spectral characteristics; spectroselective photosensitive sells; three bulk integrated photodiodes; Absorption; Electric potential; Matrix decomposition; Numerical simulation; Object detection; Optical receivers; P-n junctions; Photodiodes; Space charge; Voltage; photo-relaxation; photosensitive processes; spectral selectivity; three diode photo sell;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585869
