Characterization of CMOS defects using transient signal analysis

Author

Plusquellio, J.F. ; Chiarulli, Donald M. ; Levitan, Steven P.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA

fYear

1998

fDate

2-4 Nov 1998

Firstpage

93

Lastpage

101

Abstract

We present the results of hardware experiments designed to determine the relative contribution of CMOS coupling mechanisms to off-path signal variations caused by common types of defects. The transient signals measured in defect-free test structures coupled to defective test structures through internodal coupling capacitors, the power supply, the well and substrate are analyzed in the time and frequency domain to determine the characteristics of the signal variations produced by seven types of CMOS defects. The results of these experiments are used in the development of a failure analysis technique based on the analysis of transient signals

Keywords

CMOS integrated circuits; VLSI; failure analysis; fault diagnosis; frequency-domain analysis; integrated circuit measurement; time-domain analysis; transient analysis; CMOS defects; coupling mechanisms; defect-free test structures; failure analysis technique; frequency domain analysis; internodal coupling capacitors; off-path signal variations; signal variations; time domain analysis; transient signal analysis; Failure analysis; Frequency measurement; Hardware; Power capacitors; Power measurement; Signal analysis; Signal design; Testing; Time measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Defect and Fault Tolerance in VLSI Systems, 1998. Proceedings., 1998 IEEE International Symposium on

Conference_Location

Austin, TX

ISSN

1550-5774

Print_ISBN

0-8186-8832-7

Type

conf

DOI

10.1109/DFTVS.1998.732155

Filename

732155